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1

Miniaturization of CMOS

Radamson, Henry H., He, Xiaobin, Zhang, Qingzhu, Liu, Jinbiao, Cui, Hushan, Xiang, Jinjuan, Kong, Zhenzhen, Xiong, Wenjuan, Li, Junjie, Gao, Jianfeng, Yang, Hong, Gu, Shihai, Zhao, Xuewei, Du, Yong, Y

Journal:

Année:

2019

Langue:

english

Fichier:

PDF, 14.36 MB

english, 2019

2

The Challenges of Advanced CMOS Process from 2D to 3D

Radamson, Henry, Zhang, Yanbo, He, Xiaobin, Cui, Hushan, Li, Junjie, Xiang, Jinjuan, Liu, Jinbiao, Gu, Shihai, Wang, Guilei

Journal:

Applied Sciences

Année:

2017

Langue:

english

Fichier:

PDF, 9.27 MB

english, 2017

3

State of the Art and Future Perspectives in Advanced CMOS Technology

Radamson, Henry H., Zhu, Huilong, Wu, Zhenhua, He, Xiaobin, Lin, Hongxiao, Liu, Jinbiao, Xiang, Jinjuan, Kong, Zhenzhen, Xiong, Wenjuan, Li, Junjie, Cui, Hushan, Gao, Jianfeng, Yang, Hong, Du, Yong, X

Journal:

Année:

2020

Fichier:

PDF, 27.29 MB

2020

4

Assessing the severity of conjunctivochalasis in a senile population: a community-based epidemiology study in Shanghai, China

Xingru Zhang, Qingsong Li, Haidong Zou, Jinjuan Peng, Caicai Shi, Huanming Zhou, Guili Zhang, Minhong Xiang, Yijie Li

Journal:

BMC Public Health

Année:

2011

Langue:

english

Fichier:

PDF, 188 KB

english, 2011

5

Ion-Implanted TiN Metal Gate With Dual Band-Edge Work Function and Excellent Reliability for Advanced CMOS Device Applications

Xu, Qiuxia, Xu, Gaobo, Zhou, Huajie, Zhu, Huilong, Liang, Qingqing, Liu, Jinbiao, Li, Junfeng, Xiang, Jinjuan, Xu, Miao, Zhong, Jian, Xu, Weijia, Zhao, Chao, Chen, Dapeng, Ye, Tianchun

Journal:

IEEE Transactions on Electron Devices

Année:

2015

Langue:

english

Fichier:

PDF, 4.67 MB

english, 2015

6

Hot Implantations of P into Ge: Impact on the Diffusion Profile

Liu, J. B., Luo, Jun, Simoen, Eddy, Wang, Guilei, Xiang, Jinjuan, Li, Junfeng, Zhao, Chao, Ye, Tianchun

Journal:

ECS Journal of Solid State Science and Technology

Année:

2017

Langue:

english

Fichier:

PDF, 299 KB

english, 2017

7

FinFET with Improved Subthreshold Swing and Drain Current using 3 nm Ferroelectric Hf0.5Zr0.5O2

Zhang, Zhaohao, Xu, Gaobo, Zhang, Qingzhu, Hou, Zhaozhao, Li, Junjie, Kong, Zhenzhen, Zhang, Yongkui, Xiang, Jinjuan, Xu, Qiuxia, Wu, Zhenhua, Zhu, Huilong, Yin, Huaxiang, Wang, Wenwu, Ye, Tianchun

Journal:

IEEE Electron Device Letters

Année:

2019

Langue:

english

Fichier:

PDF, 563 KB

english, 2019

8

Comprehensive Study and Design of High-k/SiGe Gate Stacks with Interface-Engineering by Ozone Oxidation

Ma, Xueli, Xiang, Jinjuan, Zhou, Lixing, Wang, Xiaolei, Li, Yongliang, Yang, Hong, Zhang, Jing, Zhao, Chao, Yin, Huaxiang, Wang, Wenwu, Ye, Tianchun

Journal:

ECS Journal of Solid State Science and Technology

Année:

2019

Langue:

english

Fichier:

PDF, 1.10 MB

english, 2019

9

[IEEE 2019 Electron Devices Technology and Manufacturing Conference (EDTM) - Singapore, Singapore (2019.3.12-2019.3.15)] 2019 Electron Devices Technology and Manufacturing Conference (EDTM) - Understanding of mobility degradation induced by gate charges of Ge pMOSFET

Zhou, Lixing, Wang, Xiaolei, Ma, Xueli, Xiang, Jinjuan, Zhao, Chao, Ye, Tianchun, Wang, Wenwu

Année:

2019

Fichier:

PDF, 522 KB

2019

10

Effect of post-deposition annealing on charge distribution of metal-oxide-semiconductor capacitor with TiN/HfO2/SiO2/Si gate structure

Li, Tingting, Wang, Xiaolei, He, Xiaobin, Tang, Bo, Han, Kai, Qi, Zeming, Jiang, Haojie, Xiong, Wenjuan, Zhang, Peng, Li, Junfeng, Yan, Jiang, Xiang, Jinjuan, Lin, Fujiang

Journal:

Applied Physics

Année:

2020

Fichier:

PDF, 1.43 MB

2020

11

On the applicability of Gibbs free energy landscape to definition and understanding of transient negative capacitance in a ferroelectric capacitor

Zhang, Yuanyuan, Ma, Xueli, Wang, Xiaolei, Han, Kai, xiang, Jinjuan, Wang, Wenwu

Journal:

Journal of Physics D Applied Physics

Année:

2020

Fichier:

PDF, 1.01 MB

2020

12

Sulforaphane delays diabetes-induced retinal photoreceptor cell degeneration

Lv, Jinjuan, Bao, Shuyin, Liu, Tianhe, Wei, Limin, Wang, Dongming, Ye, Weikang, Wang, Nina, Song, Shiyu, Li, Jiao, Chudhary, Maryam, Ren, Xiang, Kong, Li

Journal:

Cell and Tissue Research

Année:

2020

Fichier:

PDF, 3.24 MB

2020

13

Transcriptome analysis of stem development in the tumourous stem mustardBrassica junceavar.tumidaTsen et Lee by RNA sequencing

Sun, Quan, Zhou, Guanfan, Cai, Yingfan, Fan, Yonghong, Zhu, Xiaoyan, Liu, Yihua, He, Xiaohong, Shen, Jinjuan, Jiang, Huaizhong, Hu, Daiwen, Pan, Zheng, Xiang, Liuxin, He, Guanghua, Dong, Daiwen, Yang,

Journal:

BMC Plant Biology

Année:

2012

Langue:

english

Fichier:

PDF, 1.21 MB

english, 2012

14

Band alignment of HfO2 on SiO2/Si structure

Wang, Xiaolei, Han, Kai, Wang, Wenwu, Xiang, Jinjuan, Yang, Hong, Zhang, Jing, Ma, Xueli, Zhao, Chao, Chen, Dapeng, Ye, Tianchun

Journal:

Applied Physics Letters

Année:

2012

Langue:

english

Fichier:

PDF, 755 KB

english, 2012

15

Effect of Hsp27 on early embryonic development in the mouse

Liu, Shan, Dai, Xiaonan, Cai, Lingbo, Ma, Xiang, Liu, Jinjuan, Jiang, Shiwen, Liu, Jiayin, Cui, Yugui

Journal:

Reproductive BioMedicine Online

Année:

2013

Langue:

english

Fichier:

PDF, 1.09 MB

english, 2013

16

[IEEE 2012 12th International Workshop on Junction Technology (IWJT) - Shanghai (2012.05.14-2012.05.15)] 2012 12th International Workshop on Junction Technology - Investigation of band structure at metal-gate/high-k interface of metal oxide semiconductor device with high-k and metal gate stack

Xiaolei Wang,, Wenwu Wang,, Kai Han,, Hong Yang,, Jing Zhang,, Xueli Ma,, Jinjuan Xiang,, Chao Zhao,, Dapeng Chen,, Tianchun Ye,

Année:

2012

Langue:

english

Fichier:

PDF, 817 KB

english, 2012

17

[IEEE 2012 12th International Workshop on Junction Technology (IWJT) - Shanghai (2012.05.14-2012.05.15)] 2012 12th International Workshop on Junction Technology - Band alignment of high-k dielectric on SiO2/Si stack

Jinjuan Xiang,, Xiaolei Wang,, Tingting Li,, Chao Zhao,, Wenwu Wang,, Junfeng Li,, Dapeng Chen,, Tianchun Ye,

Année:

2012

Langue:

english

Fichier:

PDF, 1.05 MB

english, 2012

18

Mitigation of Reverse Short-Channel Effect With Multilayer TiN/Ti/TiN Metal Gates in Gate Last PMOSFETs

Zhao, Lichuan, Tang, Zhaoyun, Tang, Bo, Ma, Xueli, Liu, Jinbiao, Xiang, Jinjuan, Gao, Jianfeng, Li, Chunlong, He, Xiaobin, Jia, Cheng, Ding, Mingzheng, Yang, Hong, Xu, Yefeng, Xu, Jing, Wang, Hongli,

Journal:

IEEE Electron Device Letters

Année:

2014

Langue:

english

Fichier:

PDF, 1021 KB

english, 2014

19

Reexamination of band offset transitivity employing oxide heterojunctions

Wang, Xiaolei, Xiang, Jinjuan, Wang, Wenwu, Zhang, Jing, Han, Kai, Yang, Hong, Ma, Xueli, Zhao, Chao, Chen, Dapeng, Ye, Tianchun

Journal:

Applied Physics Letters

Année:

2013

Langue:

english

Fichier:

PDF, 601 KB

english, 2013

20

A possible origin of core-level shift in SiO2/Si stacks

Wang, Xiaolei, Xiang, Jinjuan, Wang, Wenwu, Zhang, Jing, Han, Kai, Yang, Hong, Ma, Xueli, Zhao, Chao, Chen, Dapeng, Ye, Tianchun

Journal:

Applied Physics Letters

Année:

2013

Langue:

english

Fichier:

PDF, 969 KB

english, 2013

21

ECS Transactions [ECS China Semiconductor Technology International Conference 2012 (CSTIC 2012) - Shanghai, China (March 18 - March 19, 2012)] - Improved Characteristics of

Xiong, WenJuan, Xiang, Jinjuan, Ou, Wen

Année:

2012

Langue:

english

Fichier:

PDF, 358 KB

english, 2012

22

Effect of low temperature annealing on the electrical properties of an MOS capacitor with a HfO 2 dielectric and a TiN metal gate

Han, Kai, Ma, Xueli, Xiang, Jinjuan, Yang, Hong, Wang, Wenwu

Journal:

Journal of Semiconductors

Année:

2013

Langue:

english

Fichier:

PDF, 709 KB

english, 2013

23

Electric Dipole at High-$k$/SiO$_{2}$ Interface and Physical Origin by Dielectric Contact Induced Gap States

Wang, Xiaolei, Han, Kai, Wang, Wenwu, Ma, Xueli, Xiang, Jinjuan, Chen, Dapeng, Zhang, Jing

Journal:

Japanese Journal of Applied Physics

Année:

2011

Langue:

english

Fichier:

PDF, 433 KB

english, 2011

24

The N-terminal degenerated metal-binding domain is involved in the heavy metal transport activity of TaHMA2

Xiang, Shuqin, Feng, Shanshan, Zhang, Yuxiu, Tan, Jinjuan, Liang, Shuang, Chai, Tuanyao

Journal:

Plant Cell Reports

Année:

2015

Langue:

english

Fichier:

PDF, 1.32 MB

english, 2015

25

Atomic layer deposition assisted pattern transfer technology for ultra-thin block copolymer films

Chen, Wenhui, Luo, Jun, Meng, Lingkuan, Li, Junjie, Xiang, Jinjuan, Li, Junfeng, Wang, Wenwu, Chen, Dapeng, Ye, Tianchun, Zhao, Chao

Journal:

Thin Solid Films

Année:

2015

Langue:

english

Fichier:

PDF, 1.33 MB

english, 2015

26

Investigation of N Type Metal TiAlC by Thermal Atomic Layer Deposition Using TiCl 4 and TEA as Precursors

Xiang, Jinjuan, Ding, Yuqiang, Du, Liyong, Xu, Chongying, Li, Tingting, Wang, Xiaolei, Li, Junfeng, Zhao, Chao

Journal:

ECS Journal of Solid State Science and Technology

Année:

2016

Langue:

english

Fichier:

PDF, 557 KB

english, 2016

27

Dependence of electrostatic potential distribution of Al2O3/Ge structure on Al2O3 thickness

Wang, Xiaolei, Xiang, Jinjuan, Wang, Wenwu, Zhao, Chao, Zhang, Jing

Journal:

Surface Science

Année:

2016

Langue:

english

Fichier:

PDF, 842 KB

english, 2016

28

Investigation of thermal atomic layer deposited TiAlX (X=N or C) film as metal gate

Xiang, Jinjuan, Zhang, Yanbo, Li, Tingting, Wang, Xiaolei, Gao, Jianfeng, Yin, Huaxiang, Li, Junfeng, Wang, Wenwu, Ding, Yuqiang, Xu, Chongying, Zhao, Chao

Journal:

Solid-State Electronics

Année:

2016

Langue:

english

Fichier:

PDF, 800 KB

english, 2016

29

Investigation on the dominant key to achieve superior Ge surface passivation by GeOx based on the ozone oxidation

Wang, Xiaolei, Xiang, Jinjuan, Wang, Wenwu, Xiong, Yuhua, Zhang, Jing, Zhao, Chao

Journal:

Applied Surface Science

Année:

2015

Langue:

english

Fichier:

PDF, 1.19 MB

english, 2015

30

Growth mechanism of atomic-layer-deposited TiAlC metal gate based on TiCl 4 and TMA precursors

Xiang, Jinjuan, Ding, Yuqiang, Du, Liyong, Li, Junfeng, Wang, Wenwu, Zhao, Chao

Journal:

Chinese Physics B

Année:

2016

Langue:

english

Fichier:

PDF, 1.45 MB

english, 2016

31

Understanding the Role of TiN Barrier Layer on Electrical Performance of MOS Device with ALD-TiN/ALD-TiAlC Metal Gate Stacks

Xiang, Jinjuan, Li, Tingting, Wang, Xiaolei, Han, Kai, Li, Junfeng, Zhao, Chao

Journal:

ECS Journal of Solid State Science and Technology

Année:

2016

Langue:

english

Fichier:

PDF, 403 KB

english, 2016

32

Remote interfacial dipole scattering and electron mobility degradation in Ge field-effect transistors with GeO x /Al 2 O 3 gate dielectrics

Wang, Xiaolei, Xiang, Jinjuan, Wang, Shengkai, Wang, Wenwu, Zhao, Chao, Ye, Tianchun, Xiong, Yuhua, Zhang, Jing

Journal:

Journal of Physics D Applied Physics

Année:

2016

Langue:

english

Fichier:

PDF, 1.11 MB

english, 2016

33

Process optimizations to recessed e-SiGe source/drain for performance enhancement in 22nm all-last high-k/metal-gate pMOSFETs

Qin, Changliang, Wang, Guilei, Hong, Peizhen, Liu, Jinbiao, Yin, Huaxiang, Yin, Haizhou, Ma, Xiaolong, Cui, Hushan, Lu, Yihong, Meng, Lingkuan, Xiang, Jinjuan, Zhong, Huicai, Zhu, Huilong, Xu, Qiuxia,

Journal:

Solid-State Electronics

Année:

2016

Langue:

english

Fichier:

PDF, 2.46 MB

english, 2016

34

Experimental investigation on oxidation kinetics of germanium by ozone

Wang, Xiaolei, Zhao, Zhiqian, Xiang, Jinjuan, Wang, Wenwu, Zhang, Jing, Zhao, Chao, Ye, Tianchun

Journal:

Applied Surface Science

Année:

2016

Langue:

english

Fichier:

PDF, 1.94 MB

english, 2016

35

Thermal Atomic Layer Deposition of TaAlC with TaCl 5 and TMA as Precursors

Xiang, Jinjuan, Li, Tingting, Wang, Xiaolei, Du, Liyong, Ding, Yuqiang, Wang, Wenwu, Li, Junfeng, Zhao, Chao

Journal:

ECS Journal of Solid State Science and Technology

Année:

2016

Langue:

english

Fichier:

PDF, 497 KB

english, 2016

36

Isolation and characterization of a novel cadmium-regulated Yellow Stripe-Like transporter (SnYSL3) inSolanum nigrum

Feng, Shanshan, Tan, Jinjuan, Zhang, Yuxiu, Liang, Shuang, Xiang, Shuqin, Wang, Hong, Chai, Tuanyao

Journal:

Plant Cell Reports

Année:

2017

Langue:

english

Fichier:

PDF, 6.75 MB

english, 2017

37

Investigation of TaN as the wet etch stop layer for HKMG-last integration in the 22 nm and beyond nodes CMOS technology

Cui, Hushan, Luo, Jun, Xu, Jing, Gao, Jianfeng, Xiang, Jinjuan, Tang, Zhaoyun, Wang, Xiaolei, Lu, Yihong, He, Xiaobin, Li, Tingting, Tang, Bo, Yu, Jiahan, Yang, Tao, Yan, Jiang, Li, Junfeng, Zhao, Cha

Journal:

Année:

2015

Langue:

english

Fichier:

PDF, 1.22 MB

english, 2015

38

Investigation of Thermal Atomic Layer Deposited TaAlC with Low Effective Work-Function on HfO 2 Dielectric Using TaCl 5 and TEA as Precursors

Xiang, Jinjuan, Wang, Xiaolei, Li, Tingting, Gao, Jianfeng, Han, Kai, Yu, Jiahan, Wang, Wenwu, Li, Junfeng, Zhao, Chao

Journal:

ECS Journal of Solid State Science and Technology

Année:

2017

Langue:

english

Fichier:

PDF, 444 KB

english, 2017

39

Physically Based Evaluation of Effect of Buried Oxide on Surface Roughness Scattering Limited Hole Mobility in Ultrathin GeOI MOSFETs

Wang, Xiaolei, Xiang, Jinjuan, Han, Kai, Wang, Shengkai, Luo, Jun, Zhao, Chao, Ye, Tianchun, Radamson, Henry H., Simoen, Eddy, Wang, Wenwu

Journal:

IEEE Transactions on Electron Devices

Année:

2017

Langue:

english

Fichier:

PDF, 1.56 MB

english, 2017

40

Hole mobility degradation by remote Coulomb scattering and charge distribution in Al 2 O 3 /GeO x gate stacks in bulk Ge pMOSFET with GeO x grown by ozone oxidation

Zhou, Lixing, Wang, Xiaolei, Ma, Xueli, Xiang, Jinjuan, Yang, Hong, Zhao, Chao, Ye, Tianchun, Wang, Wenwu

Journal:

Journal of Physics D Applied Physics

Année:

2017

Langue:

english

Fichier:

PDF, 1.62 MB

english, 2017

41

[IEEE 2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM) - Toyama, Japan (2017.2.28-2017.3.2)] 2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM) - Oxidation mechanism and surface passivation of Germanium by ozone

Wang, Xiaolei, Xiang, Jinjuan, Zhao, Chao, Ye, Tianchun, Wang, Wenwu

Année:

2017

Langue:

english

Fichier:

PDF, 376 KB

english, 2017

42

Experimental estimation of charge neutrality level of SiO 2

Zhang, Jing, Wei, Shuhua, Wang, Xiaolei, Xiang, Jinjuan, Wang, Wenwu

Journal:

Applied Surface Science

Année:

2017

Langue:

english

Fichier:

PDF, 907 KB

english, 2017

43

Fabrication and Characterization of p-Channel Charge Trapping Type FOI-FinFET Memory with MAHAS Structure

Hou, Zhaozhao, Zhang, Qingzhu, Yin, Huaxiang, Xiang, Jinjuan, Qin, Changliang, Yao, Jiaxin, Gu, Jie

Journal:

ECS Journal of Solid State Science and Technology

Année:

2017

Langue:

english

Fichier:

PDF, 1.18 MB

english, 2017

44

Evolution of traps in TiN/O 3 -sourced Al 2 O 3 /GaN gate structures with thermal annealing temperature

Liu, Xinyu, Huang, Sen, Bao, Qilong, Wang, Xinhua, Wei, Ke, Li, Yankui, Xiang, Jinjuan, Zhao, Chao, Yang, Xuelin, Shen, Bo, Guo, Shiping

Journal:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

Année:

2018

Langue:

english

Fichier:

PDF, 1.97 MB

english, 2018

45

Band-Edge Work Function Obtained by Plasma Doping TiN Metal Gate for nMOS Device Application

Xu, Qiuxia, Zou, Wei, Xu, Gaobo, Tang, Shan, Tao, Guilong, Salimian, Siamak, Liu, Jinbiao, Liang, Qingqing, Wang, Yao, Xiang, Jinjuan, Wang, Xiaolei, Zhu, Huilong, Li, Junfeng, Zhao, Chao, Raj, Deven,

Journal:

IEEE Transactions on Electron Devices

Année:

2018

Langue:

english

Fichier:

PDF, 1.27 MB

english, 2018

46

Study on Non-monotonic Hot Carrier Degradation and Predictive Model for Long Drift Region Double Field Shields LDMOS

Yibo, Jiang, Hui, Bi, Hui, Li, Xiaojun, Tong, Jinjuan, Xiang, Xiaolei, Wang, Xiaodong, Huang

Journal:

IEEE Transactions on Device and Materials Reliability

Année:

2018

Langue:

english

Fichier:

PDF, 5.19 MB

english, 2018

47

Identification of interfacial defects in a Ge gate stack based on ozone passivation

Zhou, Lixing, Wang, Xiaolei, Ma, Xueli, Han, Kai, Wang, Yanrong, Xiang, Jinjuan, Yang, Hong, Zhang, Jing, Zhao, Chao, Ye, Tianchun, Wang, Wenwu

Journal:

Semiconductor Science and Technology

Année:

2018

Langue:

english

Fichier:

PDF, 796 KB

english, 2018

48

Comprehensive investigation of the interfacial charges and dipole in GeO x /Al 2 O 3 gate stacks of Ge MOS capacitor by postdeposition annealing

Zhou, Lixing, Wang, Xiaolei, Ma, Xueli, Han, Kai, Wang, Yanrong, Xiang, Jinjuan, Yang, Hong, Zhang, Jing, Zhao, Chao, Ye, Tianchun, Wang, Wenwu

Journal:

Japanese Journal of Applied Physics

Année:

2018

Langue:

english

Fichier:

PDF, 1.09 MB

english, 2018

49

Understanding dipole formation at dielectric/dielectric hetero-interface

Zhou, Lixing, Wang, Xiaolei, Han, Kai, Ma, Xueli, Wang, Yanrong, Xiang, Jinjuan, Yang, Hong, Zhang, Jing, Zhao, Chao, Ye, Tianchun, Radamson, Henry H., Wang, Wenwu

Journal:

Applied Physics Letters

Année:

2018

Langue:

english

Fichier:

PDF, 1.16 MB

english, 2018

50

Experimental Investigation of Remote Coulomb Scattering on Mobility Degradation of Ge pMOSFET by Various PDA Ambiences

Zhou, Lixing, Wang, Xiaolei, Han, Kai, Ma, Xueli, Wang, Yanrong, Xiang, Jinjuan, Yang, Hong, Zhang, Jing, Zhao, Chao, Ye, Tianchun, Wang, Wenwu

Journal:

IEEE Transactions on Electron Devices

Année:

2019

Fichier:

PDF, 7 KB

2019